Lectures:
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Exercises:
Repetition of basic knowledge from electronics.
Calculations of simple power circuits with diodes.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Calculations of basic power circuit with thyristors.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Calculations of switching circuits with bipolar transistors.
Calculations of switching circuits with unipolar transistors.
Calculations of switching circuits with IGBT´s.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuits with power semiconductor components at program PSpice.
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Exercises:
Repetition of basic knowledge from electronics.
Calculations of simple power circuits with diodes.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Calculations of basic power circuit with thyristors.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Calculations of switching circuits with bipolar transistors.
Calculations of switching circuits with unipolar transistors.
Calculations of switching circuits with IGBT´s.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuits with power semiconductor components at program PSpice.