Lectures:
Power semiconductor diode, static and dynamic characterization, catalog parameters.
Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characterization, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their characterization and application.
Diac, triac, characterization and style application.
Bipolar power transistor, static characterization at switch on and switch off state.
Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington connect, parallel-connected power transistor, example and application.
Unipolar power transistor, static characterization at switch on and switch off state.
Unipolar power transistor at switching mode, permissible operational area, power losses.
Catalog parameters and separation of IGBT, characterization and behavior of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, assessment losses, permissible operational area.
MCT - static and dynamic characteristic, losses and permissible operational area.
Style and casing power semiconductor components, available power range and electro temperature parameter.
Exercises:
Revision basic knowledge of electro technical.
Calculations of simple power circuit with diode.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration
Calculations of basic power circuit with thyristor.
Calculations of switching circuit with bipolar transistor.
Calculations of switching circuit with unipolar transistor.
Calculations of switching circuit with transistors IGBT.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor losses.
Laboratory exercises Nr.2 - Static characterization of power bipolar transistor.
Laboratory exercises Nr.3 - Static characterization of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuit with power semiconductor components at program PSspice.
Power semiconductor diode, static and dynamic characterization, catalog parameters.
Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characterization, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their characterization and application.
Diac, triac, characterization and style application.
Bipolar power transistor, static characterization at switch on and switch off state.
Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington connect, parallel-connected power transistor, example and application.
Unipolar power transistor, static characterization at switch on and switch off state.
Unipolar power transistor at switching mode, permissible operational area, power losses.
Catalog parameters and separation of IGBT, characterization and behavior of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, assessment losses, permissible operational area.
MCT - static and dynamic characteristic, losses and permissible operational area.
Style and casing power semiconductor components, available power range and electro temperature parameter.
Exercises:
Revision basic knowledge of electro technical.
Calculations of simple power circuit with diode.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration
Calculations of basic power circuit with thyristor.
Calculations of switching circuit with bipolar transistor.
Calculations of switching circuit with unipolar transistor.
Calculations of switching circuit with transistors IGBT.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor losses.
Laboratory exercises Nr.2 - Static characterization of power bipolar transistor.
Laboratory exercises Nr.3 - Static characterization of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuit with power semiconductor components at program PSspice.