1. Sample preparation for chromatography. Extraction, SPE, SPME, thermal dessorpion, headspace analysis.
2. Gas chromatography. Analysis of gas and BTEX, calibration, determination of basic parameters of separation.
3. Liquid chromatography. Analysis of anions. Calibration, determination of basic parameters of separation.
Dectors on the basis of mass spectrometry. determination of structural compound formula on the basis of mass spectrum.
5. Identifying of asbestos using SEM + EMA method:
a) analysis of morphology and chemical composition of asbestos and other fibrous materials
b) analysis of an unknown sample of fibrous material, confirm or refute the presence of asbestos
6. Measuring of topography of semiconductor grid sample
a) in contact mode
b) in semi contact mode
7. Powder X-ray diffraction:
a) measuring diffraction of powdered sample on the Si plate
b) evaluation of diffraction record, identifying of compounds
8. Thermal analysis, evaluation of TG and DTA curves.
9. Infrared spectrometry
10 Raman spectrometry.
2. Gas chromatography. Analysis of gas and BTEX, calibration, determination of basic parameters of separation.
3. Liquid chromatography. Analysis of anions. Calibration, determination of basic parameters of separation.
Dectors on the basis of mass spectrometry. determination of structural compound formula on the basis of mass spectrum.
5. Identifying of asbestos using SEM + EMA method:
a) analysis of morphology and chemical composition of asbestos and other fibrous materials
b) analysis of an unknown sample of fibrous material, confirm or refute the presence of asbestos
6. Measuring of topography of semiconductor grid sample
a) in contact mode
b) in semi contact mode
7. Powder X-ray diffraction:
a) measuring diffraction of powdered sample on the Si plate
b) evaluation of diffraction record, identifying of compounds
8. Thermal analysis, evaluation of TG and DTA curves.
9. Infrared spectrometry
10 Raman spectrometry.