Lectures:
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Laboratories:
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Laboratories:
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.