Power Switching Devices
| Type of study | Bachelor |
|---|---|
| Language of instruction | Czech |
| Code | 430-2202/05 |
| Abbreviation | VSP |
| Course title | Power Switching Devices |
| Credits | 3 |
| Coordinating department | Department of Applied Electronics |
| Course coordinator | Ing. Tomáš Pavelek, Ph.D. |
Subject syllabus
Lectures:
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GTO, IGCT their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Properties and applications of SiC-based components.
Laboratories:
Laboratory exercises Nr.1 - Power diode properties.
Laboratory exercises Nr.2 - Static and dynamic characteristics of power Si unipolar transistor.
Laboratory exercises Nr.3 - Static and dynamic characteristics of IGBT transistor.
Laboratory exercises Nr.4 - Static and dynamic characteristics of power SiC unipolar transistor.
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GTO, IGCT their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Properties and applications of SiC-based components.
Laboratories:
Laboratory exercises Nr.1 - Power diode properties.
Laboratory exercises Nr.2 - Static and dynamic characteristics of power Si unipolar transistor.
Laboratory exercises Nr.3 - Static and dynamic characteristics of IGBT transistor.
Laboratory exercises Nr.4 - Static and dynamic characteristics of power SiC unipolar transistor.
E-learning
Study supports are available in the LMS to students of the course.