- Basic characteristics and demands on micro - and nanoelectronics materials. Technology and preparation of physical and highly chemically pure materials. Physical, chemical and physico - chemical methods of the purification of metallic and non-metallic materials and their characterization.
- Methods of the preparation of highly pure and structural defined materials with monocrystalline structure for new type of electronic, optoelectronic and magnetic components. Influence of electrically active elements on characteristics of the electronic parts.
- Basic processes and materials. Contemporary semiconductor and integrated circuits technologies, general structure of technologies applied in microelectronics, evolution and kinds of technologies, preparation of substrates, photolithography, basic materials used at creation of textures in semiconductor elements.
- Basic semiconductors and semiconductor compounds, dielectric nanolayers and methods their formation, metallic contacts and internal wiring, micro - doping, technological defects in semiconductor elements, principles check - up and automatization of technological processes.
- Influence of geometric proportions on properties of solid materials. Properties of microcrystals and crystallization seeds, basic period of the formation of nanolayers and areas their using, dimensioned effects in structure of electronic elements
- Miniaturization and topology of electronic elements, nanotechnology operation and functional characteristics of parts, mechanism of the degradation of electronic elements.
- Mechanism of non-equilibrium processes of the formation of nanostructure. Classification of theoretic models of the crystallization, quasi - equilibrium and kinetic models, kinetic- statistic models of the creation of layers from molecular beam epitaxy, mechanism of the growth of nanolayers using chemical reaction (CVD, MO CVD, ).
- Mechanism of basic processes of the growth of nanolayers, epitaxy, evaporation, sputtering and ionic implantation, diffusion in semiconductors.
- Microelectronics. Principle of selectivity and procedure of microtechnology operations. Fundamental criteria of the classification of local operations, methods of formation of the starting topology figure on bed, masking, locally activated operation, topology conversion and generation of additional structure elements by the help of selective operations.
- Generation horizontal classification structures. Lithographic methods. EUV lithography, electron and ionic configuring lithography. Reactive ionic etching. Formation of vertical microstructures. Epitaxial methods. Molecular beam epitaxy, epitaxy from metall-organic substances. Technology of the preparation of quantum points on the base of semiconductors.
- Final operation, physical methods of check - up of defects, composition and circuits of local operations, fundamental conditions of the total removing of mechanical connections. LP CVD, LE CVD, PETEOS methods. Proposal of the micro-transistor, physical simulation.
- Micro-optoelectronics, AIIIBV, AIIBVI …compounds. Materials for laser technique, radiation detectors, solar technique.
- Magnetic and dielectric materials. Oxide materials for memory elements (ferrites, ferroelectrics), materials for bubble memories (garnets).
- Liquid crystals. Nematic, lamellar and columnar systems - structure and its transformation, materials for special purposes, whiskers.
- Methods of the preparation of highly pure and structural defined materials with monocrystalline structure for new type of electronic, optoelectronic and magnetic components. Influence of electrically active elements on characteristics of the electronic parts.
- Basic processes and materials. Contemporary semiconductor and integrated circuits technologies, general structure of technologies applied in microelectronics, evolution and kinds of technologies, preparation of substrates, photolithography, basic materials used at creation of textures in semiconductor elements.
- Basic semiconductors and semiconductor compounds, dielectric nanolayers and methods their formation, metallic contacts and internal wiring, micro - doping, technological defects in semiconductor elements, principles check - up and automatization of technological processes.
- Influence of geometric proportions on properties of solid materials. Properties of microcrystals and crystallization seeds, basic period of the formation of nanolayers and areas their using, dimensioned effects in structure of electronic elements
- Miniaturization and topology of electronic elements, nanotechnology operation and functional characteristics of parts, mechanism of the degradation of electronic elements.
- Mechanism of non-equilibrium processes of the formation of nanostructure. Classification of theoretic models of the crystallization, quasi - equilibrium and kinetic models, kinetic- statistic models of the creation of layers from molecular beam epitaxy, mechanism of the growth of nanolayers using chemical reaction (CVD, MO CVD, ).
- Mechanism of basic processes of the growth of nanolayers, epitaxy, evaporation, sputtering and ionic implantation, diffusion in semiconductors.
- Microelectronics. Principle of selectivity and procedure of microtechnology operations. Fundamental criteria of the classification of local operations, methods of formation of the starting topology figure on bed, masking, locally activated operation, topology conversion and generation of additional structure elements by the help of selective operations.
- Generation horizontal classification structures. Lithographic methods. EUV lithography, electron and ionic configuring lithography. Reactive ionic etching. Formation of vertical microstructures. Epitaxial methods. Molecular beam epitaxy, epitaxy from metall-organic substances. Technology of the preparation of quantum points on the base of semiconductors.
- Final operation, physical methods of check - up of defects, composition and circuits of local operations, fundamental conditions of the total removing of mechanical connections. LP CVD, LE CVD, PETEOS methods. Proposal of the micro-transistor, physical simulation.
- Micro-optoelectronics, AIIIBV, AIIBVI …compounds. Materials for laser technique, radiation detectors, solar technique.
- Magnetic and dielectric materials. Oxide materials for memory elements (ferrites, ferroelectrics), materials for bubble memories (garnets).
- Liquid crystals. Nematic, lamellar and columnar systems - structure and its transformation, materials for special purposes, whiskers.