| Course Unit Code | 430-2202/01 |
|---|
| Number of ECTS Credits Allocated | 4 ECTS credits |
|---|
| Type of Course Unit * | Choice-compulsory |
|---|
| Level of Course Unit * | First Cycle |
|---|
| Year of Study * | Second Year |
|---|
| Semester when the Course Unit is delivered | Winter Semester |
|---|
| Mode of Delivery | Face-to-face |
|---|
| Language of Instruction | Czech |
|---|
| Prerequisites and Co-Requisites | Course succeeds to compulsory courses of previous semester |
|---|
| Name of Lecturer(s) | Personal ID | Name |
|---|
| PAV15 | Ing. Tomáš Pavelek, Ph.D. |
| Summary |
|---|
| Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT. |
| Learning Outcomes of the Course Unit |
|---|
| The main goal of the subject is to obtain theoretical knowledge from power semiconductor devices areas and practical experiences with dimensioning and applications. Obtained knowledge employ to practical use for the design of various electronics equipments, as switching sources, various type regulators and power semiconductor converters. Learned information creates the knowledge base of bachelor, especially if his topic is aimed in area of power electronics systems application . |
| Course Contents |
|---|
Lectures:
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Exercises:
Repetition of basic knowledge from electronics.
Calculations of simple power circuits with diodes.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Calculations of basic power circuit with thyristors.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Calculations of switching circuits with bipolar transistors.
Calculations of switching circuits with unipolar transistors.
Calculations of switching circuits with IGBT´s.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuits with power semiconductor components at program PSpice. |
| Recommended or Required Reading |
|---|
| Required Reading: |
|---|
Rashid, M. H.: Power Electronics Handbook. Prentice-Hall International, Inc. ISBN 978-0-12-382036-5, 2011.
|
Brandštetter, P., Chlebiš, P.: Výkonové spínací prvky. Učební texty pro kombinované a distanční studium. VŠB-TU Ostrava, 2005.
Rashid, M. H.: Power Electronics Handbook. Prentice-Hall International, Inc. ISBN 978-0-12-382036-5, 2011.
|
| Recommended Reading: |
|---|
Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, ISBN 3642826768, 2012.
|
Vondrášek,F.: Výkonová elektronika I, skriptum ZČU Plzeň, 2003.
Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, ISBN 3642826768, 2012. |
| Planned learning activities and teaching methods |
|---|
| Lectures, Tutorials, Experimental work in labs |
| Assesment methods and criteria |
|---|
| Task Title | Task Type | Maximum Number of Points
(Act. for Subtasks) | Minimum Number of Points for Task Passing |
|---|
| Exercises evaluation and Examination | Credit and Examination | 100 (100) | 51 |
| Exercises evaluation | Credit | 40 (40) | 25 |
| Test No. 1 | Written test | 10 | 5 |
| Test No. 2 | Written test | 10 | 5 |
| Laboratory reports | Semestral project | 20 | 10 |
| Examination | Examination | 60 (60) | 20 |
| Written exam | Written examination | 40 | 15 |
| Oral exam | Oral examination | 20 | 5 |